On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of field-effect heterotransistors framework RS-trigger. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
EL Pankratov. On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger. Int J Comput Programming Database Manage 2023;4(1):65-84. DOI: 10.33545/27076636.2023.v4.i1a.82